IS62C1024 -

      Here is the description about IS62C1024 of the 128K x 8 HIGH-SPEED CMOS STATIC RAM. The ICSI IS62C1024 is a low power 131,072-word by 8-bit CMOS   static   RAM.   IS62C1024 is   fabricated   using ICSI 's   high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62C1024 is available in 32-pin 600mil DIP, 450mil SOP and 8*20mm TSOP-1 packages.
      Here are the features of IS62C1024: High-speed access time: 35, 45, 55, 70 ns; Low active power: 450 mW (typical); Low standby power: 500 uW (typical) CMOS standby; Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications; Fully static operation: no clock or refresh required; TTL compatible inputs and outputs; Single 5V (±10%) power supply.
      Here are its maximum ratings of IS62C1024. Terminal Voltage with Respect to GND is from0.5 to +7.0V. Temperature Under Bias is from10 to +85°C. Storage Temperature is from65 to +150°C. Power Dissipation is 1.5W. DC Output Current (LOW) is 20mA.
      And here are the Electrical Characteristics (Ta =25°C). Output HIGH Voltage is from 2.4 to mix V. Output LOW Voltage is from min to 0.4V. T Input HIGH Voltage is from 2.2 to VCC + 0.5V. Input Leakage is from5 to 5uA. Output Leakage is from5 to 5uA.
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