IS62C1024

Features:

* High-speed access time: 35, 45, 55, 70 ns
* Low active power: 450 mW (typical)
* Low standby power: 500 W (typical) CMOS standby
* Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications
* Fully static operation: no clock or refresh required
* TTL compatible inputs and outputs
* Single 5V (±10%) power supply


Pinout




Specifications

Symbol	Parameter	Value	Unit
VTERM	Terminal Voltage with Respect to GND	0.5 to +7.0	V
TBIAS	Temperature Under Bias	10 to +85	°C
TSTG	Storage Temperature	65 to +150	°C
PT	Power Dissipation	1.5	W
IOUT	DC Output Current (LOW)	20	mA

Description

The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. IS62C1024  is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

When CE1 is HIGH or CE2 is LOW (deselected), the IS62C1024  assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.

Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory.

The IS62C1024 is available in 32-pin 525-mil plastic SOP and TSOP (type 1) packages.