SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v
IS61WV5128BLL-10TLI: SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 4 Mbit | Organization : | 512 Kbit x 8 |
Access Time : | 10 ns | Supply Voltage - Max : | 3.6 V |
Supply Voltage - Min : | 2.4 V | Maximum Operating Current : | 45 mA |
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C |
Mounting Style : | SMD/SMT | Package / Case : | TSOP-44 |
Packaging : | Tube |
The IS61WV5128BLL-10TLI is one member of the IS61WV5128BLL family which is designed as the 512K x 16 high-speed asynchronous CMOS static RAM device that is available in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm). And this device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Features of the IS61WV5128BLL-10TLI are:(1)High-speed access times: 8, 10, 20 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Industrial and Automotive Temperature Support; (9)Lead-free available; (10)Data control for upper and lower bytes.
The absolute maximum ratings of the IS61WV5128BLL-10TLI can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to VDD+0.5 V;(2)VDD Relates to GND: -0.3 V to +4.0 V;(3)Storage Temperature: -65 to +150 °C;(4)Power Dissipation: 1.0 W.
The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to VDD+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -1 to +1 uA;(6)Output Leakage: -1 to +1 uA. If you want to know more information such as the electrical characteristics about the IS61WV5128BLL-10TLI, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Technical/Catalog Information | IS61WV5128BLL-10TLI |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 4M (512K x 8) |
Speed | 10ns |
Interface | Parallel |
Package / Case | 44-TSOP II |
Packaging | Tray |
Voltage - Supply | 1.65 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61WV5128BLL 10TLI IS61WV5128BLL10TLI 706 1108 ND 7061108ND 706-1108 |