SRAM 4Mb 8ns/3.3v 10ns/2.4-3.6v
IS61WV5128BLL-10KLI: SRAM 4Mb 8ns/3.3v 10ns/2.4-3.6v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 4 Mbit | Organization : | 512 Kbit x 8 |
Access Time : | 10 ns | Supply Voltage - Max : | 3.6 V |
Supply Voltage - Min : | 2.4 V | Maximum Operating Current : | 45 mA |
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C |
Mounting Style : | SMD/SMT | Package / Case : | SOIC-36 |
Packaging : | Tube |
Technical/Catalog Information | IS61WV5128BLL-10KLI |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 4M (512K x 8) |
Speed | 10ns |
Interface | Parallel |
Package / Case | 36-SOJ |
Packaging | Tube |
Voltage - Supply | 1.65 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61WV5128BLL 10KLI IS61WV5128BLL10KLI IS61WV5128BLL 10KLI ND IS61WV5128BLL10KLI ND IS61WV5128BLL-10KLI |