IS61WV51216BLL-10MLI

SRAM 8M (512Kx16) 10ns Async SRAM 3.3v

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IS61WV51216BLL-10MLI Picture
SeekIC No. : 00472888 Detail

IS61WV51216BLL-10MLI: SRAM 8M (512Kx16) 10ns Async SRAM 3.3v

floor Price/Ceiling Price

US $ 6.84~6.89 / Piece | Get Latest Price
Part Number:
IS61WV51216BLL-10MLI
Mfg:
ISSI
Supply Ability:
5000

Price Break

  • Qty
  • 0~480
  • 480~960
  • Unit Price
  • $6.89
  • $6.84
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/3

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Product Details

Quick Details

Memory Size : 8 Mbit Access Time : 10 ns
Supply Voltage - Max : 3.6 V Supply Voltage - Min : 2.4 V
Maximum Operating Current : 95 mA Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C Mounting Style : SMD/SMT
Package / Case : Mini-BGA Packaging : Tray    

Description

Organization :
Packaging : Tray
Mounting Style : SMD/SMT
Access Time : 10 ns
Supply Voltage - Min : 2.4 V
Maximum Operating Current : 95 mA
Supply Voltage - Max : 3.6 V
Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C
Memory Size : 8 Mbit
Package / Case : Mini-BGA


Description

 

The IS61WV51216BLL-10MLI is one member of the IS61WV51216BLL family which is designed as the 512K x 16 high-speed asynchronous CMOS static RAM device that is packaged in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm). And this device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Features of the IS61WV51216BLL-10MLI are:(1)High-speed access times: 8, 10, 20 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Industrial and Automotive Temperature Support; (9)Lead-free available; (10)Data control for upper and lower bytes. The absolute maximum ratings of the IS61WV51216BLL-10MLI can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to VDD+0.5 V;(2)VDD related to GND: -0.3 to 4.0 V;(3)Storage Temperature: -65 to +150 °C;(4)Power Dissipation: 1.0 W.

The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to VDD+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -1 to +1 uA;(6)Output Leakage: -1 to +1 uA. If you want to know more information such as the electrical characteristics about the IS61WV51216BLL-10MLI, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationIS61WV51216BLL-10MLI
VendorISSI, Integrated Silicon Solution Inc
CategoryIntegrated Circuits (ICs)
Memory TypeSRAM - Asynchronous
Memory Size8M (512K x 16)
Speed10ns
InterfaceParallel
Package / Case48-MBGA
PackagingTray
Voltage - Supply1.65 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryRAM
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IS61WV51216BLL 10MLI
IS61WV51216BLL10MLI



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