SRAM 8M (512Kx16) 10ns Async SRAM 3.3v
IS61WV51216BLL-10MLI-TR: SRAM 8M (512Kx16) 10ns Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 8 Mbit | Access Time : | 10 ns | ||
Supply Voltage - Max : | 3.6 V | Supply Voltage - Min : | 2.4 V | ||
Maximum Operating Current : | 95 mA | Maximum Operating Temperature : | + 85 C | ||
Minimum Operating Temperature : | - 40 C | Mounting Style : | SMD/SMT | ||
Package / Case : | Mini-BGA | Packaging : | Reel |
Technical/Catalog Information | IS61WV51216BLL-10MLI-TR |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 8M (512K x 16) |
Speed | 10ns |
Interface | Parallel |
Package / Case | 48-MBGA |
Packaging | Tape & Reel (TR) |
Voltage - Supply | 1.65 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61WV51216BLL 10MLI TR IS61WV51216BLL10MLITR |