Features: • High-speed access time:12 ns: 3.3V + 10%15 ns: 2.5V-3.6V• CMOS low power operation:50 mW (typical) operating25 µW (typical) standby• TTL compatible interface levels• Fully static operation: no clock or refresh required• Three state outputs• Dat...
IS61WV3216BLL: Features: • High-speed access time:12 ns: 3.3V + 10%15 ns: 2.5V-3.6V• CMOS low power operation:50 mW (typical) operating25 µW (typical) standby• TTL compatible interface leve...
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Symbol |
Parameter |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
0.5 to VDD+0.5 |
V |
TSTG |
Storage Temperature |
65 to +150 |
|
PT |
Power Dissipation |
1.5 |
W |
VDD |
VDD Related to GND |
-0.2 to +3.9 |
V |
The ISSI IS61/64WV3216BLL is a high-speed, 524,288-bit static RAM organized as 32,768 words by 16 bits. IS61/64WV3216BLL is fabricated using ISSI's high-performance CMOS technology. This IS61/64WV3216BLL highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low power consumption.
WhenCE is HIGH (deselected), the IS61/64WV3216BLL assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs,CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS61/64WV3216BLL is packaged in the JEDEC standard 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).