SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
IS61WV25616BLL-10TL: SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 4 Mbit | Organization : | 256 K x 16 |
Access Time : | 10 ns | Supply Voltage - Max : | 3.6 V |
Supply Voltage - Min : | 2.4 V | Maximum Operating Current : | 8 mA |
Maximum Operating Temperature : | + 70 C | Minimum Operating Temperature : | 0 C |
Mounting Style : | SMD/SMT | Package / Case : | TSOP-44 |
Packaging : | Tray |
The IS61WV25616BLL-10TL is one member of the IS61WV25616BLL family which is designed as the 2M x 8 high-speed asynchronous CMOS static RAM device that is available in 48 ball mini BGA and 44-pin TSOP (Type II) packages. And this device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Features of the IS61WV25616BLL-10TL are:(1)High-speed access times: 8, 10, 20 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Industrial and Automotive Temperature Support; (9)Lead-free available; (10)Data control for upper and lower bytes.
The absolute maximum ratings of the IS61WV25616BLL-10TL can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to VDD+0.5 V;(2)VDD related to GND: -0.3 to 4.0 V;(3)Storage Temperature: -65 to +150 °C;(4)Power Dissipation: 1.0 W. The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to VDD+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -1 to +1 uA;(6)Output Leakage: -1 to +1 uA. If you want to know more information such as the electrical characteristics about the IS61WV25616BLL-10TL, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Technical/Catalog Information | IS61WV25616BLL-10TL |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 4M (256K x 16) |
Speed | 10ns |
Interface | Parallel |
Package / Case | 44-TSOP II |
Packaging | Tray |
Voltage - Supply | 2.4 V ~ 3.6 V |
Operating Temperature | 0°C ~ 70°C |
Format - Memory | RAM |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61WV25616BLL 10TL IS61WV25616BLL10TL 706 1105 ND 7061105ND 706-1105 |