IS61WV25616BLL-10TL

SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v

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SeekIC No. : 00471134 Detail

IS61WV25616BLL-10TL: SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v

floor Price/Ceiling Price

US $ 2.03~2.43 / Piece | Get Latest Price
Part Number:
IS61WV25616BLL-10TL
Mfg:
ISSI
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $2.43
  • $2.3
  • $2.11
  • $2.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Memory Size : 4 Mbit Organization : 256 K x 16
Access Time : 10 ns Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.4 V Maximum Operating Current : 8 mA
Maximum Operating Temperature : + 70 C Minimum Operating Temperature : 0 C
Mounting Style : SMD/SMT Package / Case : TSOP-44
Packaging : Tray    

Description

Packaging : Tray
Mounting Style : SMD/SMT
Access Time : 10 ns
Supply Voltage - Min : 2.4 V
Organization : 256 K x 16
Supply Voltage - Max : 3.6 V
Package / Case : TSOP-44
Maximum Operating Temperature : + 70 C
Minimum Operating Temperature : 0 C
Memory Size : 4 Mbit
Maximum Operating Current : 8 mA


Description

The IS61WV25616BLL-10TL is one member of the IS61WV25616BLL family which is designed as the 2M x 8 high-speed asynchronous CMOS static RAM device that is available in 48 ball mini BGA and 44-pin TSOP (Type II) packages. And this device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Features of the IS61WV25616BLL-10TL are:(1)High-speed access times: 8, 10, 20 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Industrial and Automotive Temperature Support; (9)Lead-free available; (10)Data control for upper and lower bytes.

The absolute maximum ratings of the IS61WV25616BLL-10TL can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to VDD+0.5 V;(2)VDD related to GND: -0.3 to 4.0 V;(3)Storage Temperature: -65 to +150 °C;(4)Power Dissipation: 1.0 W. The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to VDD+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -1 to +1 uA;(6)Output Leakage: -1 to +1 uA. If you want to know more information such as the electrical characteristics about the IS61WV25616BLL-10TL, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationIS61WV25616BLL-10TL
VendorISSI, Integrated Silicon Solution Inc
CategoryIntegrated Circuits (ICs)
Memory TypeSRAM - Asynchronous
Memory Size4M (256K x 16)
Speed10ns
InterfaceParallel
Package / Case44-TSOP II
PackagingTray
Voltage - Supply2.4 V ~ 3.6 V
Operating Temperature0°C ~ 70°C
Format - MemoryRAM
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IS61WV25616BLL 10TL
IS61WV25616BLL10TL
706 1105 ND
7061105ND
706-1105



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