SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
IS61WV25616BLL-10BLI: SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 4 Mbit | Access Time : | 10 ns | ||
Supply Voltage - Max : | 3.6 V | Supply Voltage - Min : | 2.4 V | ||
Maximum Operating Current : | 40 mA | Maximum Operating Temperature : | + 85 C | ||
Minimum Operating Temperature : | - 40 C | Mounting Style : | SMD/SMT | ||
Package / Case : | Mini-BGA | Packaging : | Tray |
Technical/Catalog Information | IS61WV25616BLL-10BLI |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 4M (256K x 16) |
Speed | 10ns |
Interface | Parallel |
Package / Case | 48-MBGA |
Packaging | Tray |
Voltage - Supply | 2.4 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61WV25616BLL 10BLI IS61WV25616BLL10BLI 706 1104 ND 7061104ND 706-1104 |