SRAM 2M (128Kx16) 10ns Async SRAM 3.3v
IS61WV12816DBLL-10BLI: SRAM 2M (128Kx16) 10ns Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 2 Mbit | Organization : | 128 K x 16 |
Access Time : | 10 ns | Supply Voltage - Max : | 3.6 V |
Supply Voltage - Min : | 2.4 V | Maximum Operating Current : | 70 uA |
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C |
Mounting Style : | SMD/SMT | Package / Case : | BGA-48 |
Packaging : | Tray |
Technical/Catalog Information | IS61WV12816DBLL-10BLI |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 2M (128K x 16) |
Speed | 10nS |
Interface | Parallel |
Package / Case | 48-MBGA |
Packaging | Tray |
Voltage - Supply | 3 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61WV12816DBLL 10BLI IS61WV12816DBLL10BLI |