IS61WV102416ALL

Notes:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. IS61WV102416ALL/BLL  is fabricated using ISSI's high-performance CMOS technology. This IS61WV102416ALL/BLL  highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

When CE is HIGH (deselected), the IS61WV102416ALL/BLL  assumes a standby mode at which the power dissipation can be
reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

The IS61WV102416ALL/BLL  is packaged in the JEDEC standard 48-pin TSOP Type I and 48-pin Mini BGA (9mm x 11mm).