IS61SP12836

Features: • Internal self-timed write cycle• Individual Byte Write Control and Global Write• Clock controlled, registered address, data and control• Pentium™ or linear burst sequence control using MODE input• Three chip enables for simple depth expansion and add...

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SeekIC No. : 004379225 Detail

IS61SP12836: Features: • Internal self-timed write cycle• Individual Byte Write Control and Global Write• Clock controlled, registered address, data and control• Pentium™ or linear ...

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Part Number:
IS61SP12836
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Pentium™ or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Common data inputs and data outputs
• JEDEC 100-pin LQFP and 119-pin PBGA package
• Single +3.3V, +10%, 5% power supply
• Power-down snooze mode



Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit
TBIAS Temperature Under Bias -40 to +85
TSTG Storage Temperature -55 to +150
PD Power Dissipation 1.6 W
IOUT Output Current (per I/O) 100 mA
VIN, VOUT Voltage Relative to GND for I/O Pins -0.5 to VCCQ + 0.3 V
VIN Voltage Relative to GND for for Address and Control Inputs -0.5 to VCC + 0.5 V
VCC Voltage on Vcc Supply Relatiive to GND -0.5 to 4.6 V



Description

The ICSI IS61SP12836 is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, secondary cache for the i486™, Pentium™, 680X0™, and PowerPC™ microprocessors. It is organized as 131,072 words by 36 bits, fabricated with ICSI's advanced CMOS technology. The device integrates a 2-bit burst counter, highspeed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be from one to four bytes wide as controlled by the write control inputs. Separate byte enables allow individual bytes to be written. BW1 controls DQa, BW2 controls DQb, BW3 controls DQc, BW4 controls DQd, conditioned by BWE being LOW. A LOW on GW input would cause all bytes to be written.

Bursts can be initiated with either ADSP (Address Status Processor) or ADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be generated internally by the IS61SP12836 and controlled by the ADV (burst address advance) input pin.

The mode pin is used to select the burst sequence order, Linear burst is achieved when this pin is tied LOW. Interleave burst is achieved when this pin is tied HIGH or left floating.




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