SRAM 8Mb 512Kx18 200Mhz 3.3v I/O
IS61NLP51218A-200TQI-TR: SRAM 8Mb 512Kx18 200Mhz 3.3v I/O
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 9 Mbit | Organization : | 512 K x 18 |
Access Time : | 3.1 ns | Supply Voltage - Max : | 3.465 V |
Supply Voltage - Min : | 3.135 V | Maximum Operating Current : | 280 mA |
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C |
Mounting Style : | SMD/SMT | Package / Case : | TQFP-100 |
Packaging : | Reel |
Technical/Catalog Information | IS61NLP51218A-200TQI-TR |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Synchronous |
Memory Size | 9M (512K x 18) |
Speed | 200MHz |
Interface | Parallel |
Package / Case | 100-TQFP |
Packaging | Tape & Reel (TR) |
Voltage - Supply | 3.135 V ~ 3.465 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IS61NLP51218A 200TQI TR IS61NLP51218A200TQITR |