SRAM 4M (256Kx18) 200MHz Sync SRAM 3.3v
IS61NLP25618A-200B3I: SRAM 4M (256Kx18) 200MHz Sync SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 4.5 Mbit | Access Time : | 3.1 ns | ||
Supply Voltage - Max : | 3.465 V | Supply Voltage - Min : | 3.135 V | ||
Maximum Operating Current : | 210 mA | Maximum Operating Temperature : | + 85 C | ||
Minimum Operating Temperature : | - 40 C | Mounting Style : | SMD/SMT | ||
Package / Case : | BGA | Packaging : | Tray |
Technical/Catalog Information | IS61NLP25618A-200B3I |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Synchronous |
Memory Size | 4M (256K x 18) |
Speed | 200MHz |
Interface | Parallel |
Package / Case | 165-PBGA |
Packaging | Tray |
Voltage - Supply | 3.135 V ~ 3.465 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IS61NLP25618A 200B3I IS61NLP25618A200B3I |