SRAM 4Mb 128Kx36 200Mhz 3.3v I/O
IS61NLP12836A-200TQI: SRAM 4Mb 128Kx36 200Mhz 3.3v I/O
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 4 MB | Organization : | 128 K x 36 |
Access Time : | 3.1 ns | Supply Voltage - Max : | 3.465 V |
Supply Voltage - Min : | 3.135 V | Maximum Operating Current : | 210 mA |
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C |
Mounting Style : | SMD/SMT | Package / Case : | TQFP-100 |
Packaging : | Tube |
Technical/Catalog Information | IS61NLP12836A-200TQI |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Synchronous |
Memory Size | 4M (128K x 36) |
Speed | 200MHz |
Interface | Parallel |
Package / Case | 100-TQFP |
Packaging | Tray |
Voltage - Supply | 3.135 V ~ 3.465 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IS61NLP12836A 200TQI IS61NLP12836A200TQI |