SRAM 1Mb 64Kx16 10ns Async SRAM 3.3v
IS61LV6416-10TL: SRAM 1Mb 64Kx16 10ns Async SRAM 3.3v
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 1 Mbit | Organization : | 64 K x 16 | ||
Access Time : | 10 ns | Supply Voltage - Max : | 3.63 V | ||
Supply Voltage - Min : | 3.135 V | Maximum Operating Current : | 5 mA | ||
Maximum Operating Temperature : | + 70 C | Minimum Operating Temperature : | 0 C | ||
Mounting Style : | SMD/SMT | Package / Case : | TSOP-44 |
The IS61LV6416-10TL is one member of the IS61LV6416 family which is designed as the 64K x 16 high-speed asynchronous CMOS static RAM device that is available in the JEDEC standard 44-pin 400 mil SOJ, 44-pin 400 mil TSOP-2 and 48-pin 6 x 8 mm TFBGA. Also this device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Features of the IS61LV6416-10TL are:(1)High-speed access times: 8, 10, 12 and 15 ns; (2)Data control for upper and lower bytes; (3)CMOS low power operation: 250 mW (typical) operating and 250 uW (typical) standby; (4)TTL compatible interface levels; (5)single 3.3V power supply; (6)fully static operation: no clock or refresh required; (7)industrial temperature available; (8)three state outputs.
The absolute maximum ratings of the IS61LV6416-10TL can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to Vcc+0.5 V;(2)DC output current (low): 20 mA;(3)Storage Temperature: -65 to +150 °C;(4)Power Dissipation: 1.5 W. The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to Vcc+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -2 to +2 uA;(6)Output Leakage: -2 to +2 uA. If you want to know more information such as the electrical characteristics about the IS61LV6416-10TL, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Technical/Catalog Information | IS61LV6416-10TL |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 1M (64K x 16) |
Speed | 10ns |
Interface | Parallel |
Package / Case | 44-TSOP II |
Packaging | Tray |
Voltage - Supply | 3.135 V ~ 3.6 V |
Operating Temperature | 0°C ~ 70°C |
Format - Memory | RAM |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61LV6416 10TL IS61LV641610TL 706 1039 ND 7061039ND 706-1039 |