SRAM 1Mb 64Kx16 10ns Async SRAM 3.3v
IS61LV6416-10TI: SRAM 1Mb 64Kx16 10ns Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 1 Mbit | Organization : | 64 K x 16 | ||
Access Time : | 10 ns | Supply Voltage - Max : | 3.63 V | ||
Supply Voltage - Min : | 3.135 V | Maximum Operating Current : | 130 mA | ||
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C | ||
Mounting Style : | SMD/SMT | Package / Case : | TSOP-44 |
Technical/Catalog Information | IS61LV6416-10TI |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 1M (64K x 16) |
Speed | 10ns |
Interface | Parallel |
Package / Case | 44-TSOP II |
Packaging | Tray |
Voltage - Supply | 3.135 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IS61LV6416 10TI IS61LV641610TI |