SRAM 4Mb 512Kx8 10ns Async SRAM 3.3v
IS61LV5128AL-10TLI: SRAM 4Mb 512Kx8 10ns Async SRAM 3.3v
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 4 Mbit | Organization : | 512 K x 8 |
Access Time : | 10 ns | Supply Voltage - Max : | 3.63 V |
Supply Voltage - Min : | 3.135 V | Maximum Operating Current : | 20 mA |
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C |
Mounting Style : | SMD/SMT | Package / Case : | TSOP-44 |
Packaging : | Tray |
The IS61LV5128AL-10TLI is one member of the IS61LV5128AL family which is designed as the 512K x 8 high-speed asynchronous CMOS static RAM device that is available in 36-pin 400-mil SOJ, 36- pin mini BGA, and 44-pin TSOP (Type II) packages. And this device assumes a standby mode at which the power dissipation can be reduced down to 250 W (typical) with CMOS input levels.
Features of the IS61LV5128AL-10TLI are:(1)high-speed access times: 10, 12 ns; (2)high-performance, low-power CMOS process; (3)multiple center power and ground pins for greater noise immunity; (4)easy memory expansion with CE and OE options; (5)CE power-down; (6)fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)single 3.3V power supply; (9)lead-free available.
The absolute maximum ratings of the IS61LV5128AL-10TLI can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to VDD+0.5 V;(2)Storage Temperature: -65 to +150 °C;(3)Power Dissipation: 1.0 W. The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to VDD+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -2 to +2 uA;(6)Output Leakage: -2 to +2 uA. If you want to know more information such as the electrical characteristics about the IS61LV5128AL-10TLI, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Technical/Catalog Information | IS61LV5128AL-10TLI |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 4M (512K x 8) |
Speed | 10ns |
Interface | Parallel |
Package / Case | 44-TSOP II |
Packaging | Tray |
Voltage - Supply | 3.135 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61LV5128AL 10TLI IS61LV5128AL10TLI 706 1038 ND 7061038ND 706-1038 |