IS61LV5128AL-10TLI

SRAM 4Mb 512Kx8 10ns Async SRAM 3.3v

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SeekIC No. : 00471055 Detail

IS61LV5128AL-10TLI: SRAM 4Mb 512Kx8 10ns Async SRAM 3.3v

floor Price/Ceiling Price

US $ 2.41~2.95 / Piece | Get Latest Price
Part Number:
IS61LV5128AL-10TLI
Mfg:
ISSI
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $2.95
  • $2.79
  • $2.56
  • $2.41
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Memory Size : 4 Mbit Organization : 512 K x 8
Access Time : 10 ns Supply Voltage - Max : 3.63 V
Supply Voltage - Min : 3.135 V Maximum Operating Current : 20 mA
Maximum Operating Temperature : + 85 C Minimum Operating Temperature : - 40 C
Mounting Style : SMD/SMT Package / Case : TSOP-44
Packaging : Tray    

Description

Packaging : Tray
Organization : 512 K x 8
Mounting Style : SMD/SMT
Access Time : 10 ns
Maximum Operating Temperature : + 85 C
Package / Case : TSOP-44
Memory Size : 4 Mbit
Maximum Operating Current : 20 mA
Minimum Operating Temperature : - 40 C
Supply Voltage - Min : 3.135 V
Supply Voltage - Max : 3.63 V


Description

The IS61LV5128AL-10TLI is one member of the IS61LV5128AL family which is designed as the 512K x 8 high-speed asynchronous CMOS static RAM device that is available in 36-pin 400-mil SOJ, 36- pin mini BGA, and 44-pin TSOP (Type II) packages. And this device assumes a standby mode at which the power dissipation can be reduced down to 250 W (typical) with CMOS input levels.

Features of the IS61LV5128AL-10TLI are:(1)high-speed access times: 10, 12 ns; (2)high-performance, low-power CMOS process; (3)multiple center power and ground pins for greater noise immunity; (4)easy memory expansion with CE and OE options; (5)CE power-down; (6)fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)single 3.3V power supply; (9)lead-free available.

The absolute maximum ratings of the IS61LV5128AL-10TLI can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to VDD+0.5 V;(2)Storage Temperature: -65 to +150 °C;(3)Power Dissipation: 1.0 W. The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to VDD+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -2 to +2 uA;(6)Output Leakage: -2 to +2 uA. If you want to know more information such as the electrical characteristics about the IS61LV5128AL-10TLI, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationIS61LV5128AL-10TLI
VendorISSI, Integrated Silicon Solution Inc
CategoryIntegrated Circuits (ICs)
Memory TypeSRAM - Asynchronous
Memory Size4M (512K x 8)
Speed10ns
InterfaceParallel
Package / Case44-TSOP II
PackagingTray
Voltage - Supply3.135 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryRAM
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IS61LV5128AL 10TLI
IS61LV5128AL10TLI
706 1038 ND
7061038ND
706-1038



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