IS61LV51216-10TLI

SRAM 8Mb 512Kx16 10ns Async SRAM 3.3v

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SeekIC No. : 00473400 Detail

IS61LV51216-10TLI: SRAM 8Mb 512Kx16 10ns Async SRAM 3.3v

floor Price/Ceiling Price

US $ 7.64~7.7 / Piece | Get Latest Price
Part Number:
IS61LV51216-10TLI
Mfg:
ISSI
Supply Ability:
5000

Price Break

  • Qty
  • 0~135
  • 135~540
  • Unit Price
  • $7.7
  • $7.64
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/6

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Product Details

Quick Details

Memory Size : 8 Mbit Organization : 512 K x 16
Access Time : 10 ns Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 3.135 V Maximum Operating Current : 110 mA
Maximum Operating Temperature : + 85 C Minimum Operating Temperature : - 40 C
Mounting Style : SMD/SMT Package / Case : TSOP-44    

Description

Packaging :
Mounting Style : SMD/SMT
Access Time : 10 ns
Supply Voltage - Max : 3.6 V
Maximum Operating Temperature : + 85 C
Package / Case : TSOP-44
Minimum Operating Temperature : - 40 C
Memory Size : 8 Mbit
Organization : 512 K x 16
Supply Voltage - Min : 3.135 V
Maximum Operating Current : 110 mA


Specifications

  Connection Diagram


Description

The IS61LV51216-10TLI is one member of the IS61LV51216 family which is designed as the 512K x 16 high-speed asynchronous CMOS static RAM device that is available in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm). And this device is fabricated using ISSI's high-performance CMOS technology.

Features of the IS61LV51216-10TLI are:(1)High-speed access time:; (2)8, 10, and 12 ns; (3)CMOS low power operation; (4)Low stand-by power:; (5)Less than 5 mA (typ.) CMOS stand-by; (6)TTL compatible interface levels; (7)Single 3.3V power supply; (8)Fully static operation: no clock or refresh required; (9)Three state outputs; (10)Data control for upper and lower bytes; (11)Industrial temperature available; (12)Lead-free available.

The absolute maximum ratings of the IS61LV51216-10TLI can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to VDD+0.5 V;(2)Storage Temperature: -65 to +150 °C;(3)Power Dissipation: 1.0 W;(4)VDD Related to GND: -0.3 to +4.0 V. The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.2 to VDD+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -1 to +1 uA;(6)Output Leakage: -1 to +1 uA. If you want to know more information such as the electrical characteristics about the IS61LV51216-10TLI, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationIS61LV51216-10TLI
VendorISSI, Integrated Silicon Solution Inc
CategoryIntegrated Circuits (ICs)
Memory TypeSRAM - Asynchronous
Memory Size8M (512K x 16)
Speed10ns
InterfaceParallel
Package / Case44-TSOP II
PackagingTray
Voltage - Supply3.135 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryRAM
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IS61LV51216 10TLI
IS61LV5121610TLI



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