SRAM 3Mb 128Kx24 10ns Async SRAM 3.3v
IS61LV12824-10BL: SRAM 3Mb 128Kx24 10ns Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 3 Mbit | Organization : | 128 K x 24 |
Access Time : | 10 ns | Supply Voltage - Max : | 3.63 V |
Supply Voltage - Min : | 2.97 V | Maximum Operating Current : | 180 mA |
Maximum Operating Temperature : | + 70 C | Minimum Operating Temperature : | 0 C |
Mounting Style : | SMD/SMT | Package / Case : | PBGA-119 |
Packaging : | Tube |
Technical/Catalog Information | IS61LV12824-10BL |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 3M (128K x 24) |
Speed | 10ns |
Interface | Parallel |
Package / Case | 119-BGA |
Packaging | Tray |
Voltage - Supply | 3.135 V ~ 3.6 V |
Operating Temperature | 0°C ~ 70°C |
Format - Memory | RAM |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61LV12824 10BL IS61LV1282410BL |