SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v
IS61LV12816L-10BI: SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 2 Mbit | Organization : | 128 K x 16 | ||
Access Time : | 10 ns | Supply Voltage - Max : | 3.6 V | ||
Supply Voltage - Min : | 3.135 V | Maximum Operating Current : | 65 mA | ||
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C | ||
Mounting Style : | SMD/SMT | Package / Case : | mBGA-48 |
Technical/Catalog Information | IS61LV12816L-10BI |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 2M (128K x 16) |
Speed | 10nS |
Interface | Parallel |
Package / Case | 48-MBGA |
Packaging | Tray |
Voltage - Supply | 3.135 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IS61LV12816L 10BI IS61LV12816L10BI |