SRAM 18M (1Mx18) 200MHz Sync SRAM 3.3v
IS61LPS102418A-200TQLI: SRAM 18M (1Mx18) 200MHz Sync SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 18 Mbit | Access Time : | 3.1 ns | ||
Supply Voltage - Max : | 3.465 V | Supply Voltage - Min : | 3.135 V | ||
Maximum Operating Current : | 475 mA | Maximum Operating Temperature : | + 85 C | ||
Minimum Operating Temperature : | - 40 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TQFP-100 | Packaging : | Tray |
The IS61LPS102418A-200TQLI is one member of the IS61LPS102418A family which is designed as the 512K x 36 18Mb synchronous pipelined, single cycle deselect static RAM device that is organized as 524,288 words by 36 bits.
Features of the IS61LPS102418A-200TQLI are:(1)Internal self-timed write cycle; (2)Individual Byte Write Control and Global Write; (3)Clock controlled, registered address, data and control; (4)Burst sequence control using MODE input; (5)Three chip enable option for simple depth expansion and address pipelining; (6)Common data inputs and data outputs; (7)Auto Power-down during deselect; (8)Single cycle deselect; (9)Snooze MODE for reduced-power standby; (10)JTAG Boundary Scan for PBGA package; (11)JEDEC 100-Pin TQFP, 119-ball PBGA, 165-ball PBGA, and 209-ball (x72) packages; (12)Lead-free available.
The absolute maximum ratings of the IS61LPS102418A-200TQLI can be summarized as:(1)Storage Temperature: -55 to +150 °C;(2)Power Dissipation: 1.6 W;(3)Output Current (per I/O): 100 mA;(4)Voltage Relative to Vss for I/O Pins: -0.5 to VDDQ+0.5 V;(5)Voltage Relative to Vss for Address and Control Inputs: -0.5 to VDD+0.5 V;(6)Voltage on VDD Supply Relative to Vss: -0.5 to +4.6 V.
The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 or 2.0 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to VDD+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -5 to +5 uA;(6)Output Leakage: -5 to +5 uA. If you want to know more information such as the electrical characteristics about the IS61LPS102418A-200TQLI, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Technical/Catalog Information | IS61LPS102418A-200TQLI |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Synchronous |
Memory Size | 18M (1M x 18) |
Speed | 200MHz |
Interface | Parallel |
Package / Case | 100-TQFP |
Packaging | Tray |
Voltage - Supply | 3.135 V ~ 3.465 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61LPS102418A 200TQLI IS61LPS102418A200TQLI |