SRAM 8M (256Kx36) 200MHz Sync SRAM 3.3v
IS61LPD25636A-200TQLI: SRAM 8M (256Kx36) 200MHz Sync SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 9 Mbit | Access Time : | 3.1 ns | ||
Supply Voltage - Max : | 3.465 V | Supply Voltage - Min : | 3.135 V | ||
Maximum Operating Current : | 275 mA | Maximum Operating Temperature : | + 85 C | ||
Minimum Operating Temperature : | - 40 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TQFP-100 | Packaging : | Tray |
Technical/Catalog Information | IS61LPD25636A-200TQLI |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Synchronous |
Memory Size | 9M (256K x 36) |
Speed | 200MHz |
Interface | Parallel |
Package / Case | 100-TQFP |
Packaging | Tray |
Voltage - Supply | 3.135 V ~ 3.465 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61LPD25636A 200TQLI IS61LPD25636A200TQLI |