SRAM 4M (512Kx8) 25ns Async SRAM
IS61C5128AS-25QLI: SRAM 4M (512Kx8) 25ns Async SRAM
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 4 Mbit | Organization : | 512 Kbit x 8 |
Access Time : | 25 ns | Supply Voltage - Max : | 5.5 V |
Supply Voltage - Min : | 4.5 V | Maximum Operating Current : | 15 mA |
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C |
Mounting Style : | SMD/SMT | Package / Case : | SOP-32 |
Packaging : | Tray |
Technical/Catalog Information | IS61C5128AS-25QLI |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 4M (512K x 8) |
Speed | 25ns |
Interface | Parallel |
Package / Case | 32-SOP |
Packaging | Tube |
Voltage - Supply | 4.5 V ~ 5.5 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61C5128AS 25QLI IS61C5128AS25QLI 706 1060 5 ND 70610605ND 706-1060-5 |