SRAM 4M (512Kx8) 10ns Async SRAM
IS61C5128AL-10TLI-TR: SRAM 4M (512Kx8) 10ns Async SRAM
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 4 Mbit | Access Time : | 10 ns | ||
Supply Voltage - Max : | 5.5 V | Supply Voltage - Min : | 4.5 V | ||
Maximum Operating Current : | 50 mA | Maximum Operating Temperature : | + 85 C | ||
Minimum Operating Temperature : | - 40 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSOP-II | Packaging : | Reel |
Technical/Catalog Information | IS61C5128AL-10TLI-TR |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 4M (512K x 8) |
Speed | 10ns |
Interface | Parallel |
Package / Case | 44-TSOP II |
Packaging | Tape & Reel (TR) |
Voltage - Supply | 4.5 V ~ 5.5 V |
Operating Temperature | -40°C ~ 85°C |
Format - Memory | RAM |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61C5128AL 10TLI TR IS61C5128AL10TLITR |