IS61C256AL

Features:

• High-speed access time: 10, 12 ns
• CMOS Low Power Operation
- 1 mW (typical) CMOS standby
- 125 mW (typical) operating
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single 5V power supply
• Lead-free available




Pinout






Specifications

Symbol	Parameter	Value	Unit
VTERM	Terminal Voltage with Respect to GND	0.5 to +7.0	V
TSTG	Storage Temperature	65 to +150
PT	Power Dissipation	1.5	W
IOUT	DC Output Current (LOW)	20	mA

Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The ISSI IS61C256AL is a very high-speed, low power, 32,768 word by 8-bit static RAMs. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns maximum.

WhenCE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 150 W (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory.

The IS61C256AL is pin compatible with other 32Kx8 SRAMs and are available in 28-pin SOJ and TSOP (Type I) packages.