Features: • Clock Frequency: 200, 166, 100 MHz• Power supply (VDD and VDDQ): 2.5V• SSTL 2 interface• Four internal banks to hide row Pre-charge and Active operations• Commands and addresses register on positive clock edges (CLK)• Bi-directional Data Strobe signa...
IS43R32400A: Features: • Clock Frequency: 200, 166, 100 MHz• Power supply (VDD and VDDQ): 2.5V• SSTL 2 interface• Four internal banks to hide row Pre-charge and Active operations• C...
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Symbol | Parameters | Rating | Unit |
VDD MAX | Maximum Supply Voltage | 0.3 to +3.6 | V |
VDDQ MAX | Maximum Supply Voltage for Output Buffer | 0.3 to +3.6 | V |
VIN, VREF | Input Voltage, Reference Voltage | 0.3 to VDDQ + 0.3 | V |
VOUT | Output Voltage | 0.3 to VDDQ + 0.3 | V |
PD MAX | Allowable Power Dissipation | 2 | W |
ICS | Output Shorted Current | 50 | mA |
TOPR | Operating Temperature Com. Ind. |
0 to +70 40 to +85 |
|
TSTG | Storage Temperature | 55 to +150 |
ISSI's 128-Mbit DDR SDRAM IS43R32400A achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory array is internally organized as four banks of 32M-bit to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The IS43R32400A is available in 32-bit data word size. Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK. Auto Refresh, Active Power Down, and Pre-charge Power Down modes are enabled by using clock enable (CKE) and other inputs in an industry-standard sequence. All input and output voltage levels are compatible with SSTL 2.