IS43R32400A

Features: • Clock Frequency: 200, 166, 100 MHz• Power supply (VDD and VDDQ): 2.5V• SSTL 2 interface• Four internal banks to hide row Pre-charge and Active operations• Commands and addresses register on positive clock edges (CLK)• Bi-directional Data Strobe signa...

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SeekIC No. : 004379066 Detail

IS43R32400A: Features: • Clock Frequency: 200, 166, 100 MHz• Power supply (VDD and VDDQ): 2.5V• SSTL 2 interface• Four internal banks to hide row Pre-charge and Active operations• C...

floor Price/Ceiling Price

Part Number:
IS43R32400A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Features:

• Clock Frequency: 200, 166, 100 MHz
• Power supply (VDD and VDDQ): 2.5V
• SSTL 2 interface
• Four internal banks to hide row Pre-charge and Active operations
• Commands and addresses register on positive clock edges (CLK)
• Bi-directional Data Strobe signal for data capture
• Differential clock inputs (CLK and CLK) for two data accesses per clock cycle
• Data Mask feature for Writes supported
• DLL aligns data I/O and Data Strobe transitions with clock inputs
• Half-strength and Matched drive strength options
• Programmable burst length for Read and Write operations
• Programmable CAS Latency (3, 4, 5 clocks)
• Programmable burst sequence: sequential or interleaved
• Burst concatenation and truncation supported for maximum data throughput
• Auto Pre-charge option for each Read or Write burst
• 4096 refresh cycles every 32ms
• Auto Refresh and Self Refresh Modes
• Pre-charge Power Down and Active Power Down Modes
• Industrial Temperature Availability
• Lead-free Availability



Specifications

Symbol Parameters Rating Unit
VDD MAX Maximum Supply Voltage 0.3 to +3.6 V
VDDQ MAX Maximum Supply Voltage for Output Buffer 0.3 to +3.6 V
VIN, VREF Input Voltage, Reference Voltage 0.3 to VDDQ + 0.3 V
VOUT Output Voltage 0.3 to VDDQ + 0.3 V
PD MAX Allowable Power Dissipation 2 W
ICS Output Shorted Current 50 mA
TOPR Operating Temperature Com.
Ind.
0 to +70
40 to +85
TSTG Storage Temperature 55 to +150

Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. All voltages are referenced to Vss.



Description

ISSI's 128-Mbit DDR SDRAM IS43R32400A achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory array is internally organized as four banks of 32M-bit to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The IS43R32400A is available in 32-bit data word size. Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK. Auto Refresh, Active Power Down, and Pre-charge Power Down modes are enabled by using clock enable (CKE) and other inputs in an industry-standard sequence. All input and output voltage levels are compatible with SSTL 2.




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