Features: • Fast access and cycle time• TTL compatible inputs and outputs• Refresh Interval: 1024 cycles/16 ms• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden• JEDEC standard pinout• Single power supply:-- 5V ± 10% (IS41C85125)-- 3.3V ± 10% (IS41LV8512...
IS41LV85125: Features: • Fast access and cycle time• TTL compatible inputs and outputs• Refresh Interval: 1024 cycles/16 ms• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden•...
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Features: • TTL compatible inputs and outputs; tristate I/O• Refresh Interval: - Auto ...
Features: • Extended Data-Out (EDO) Page Mode access cycle• TTL compatible inputs and ...
Features: • TTL compatible inputs and outputs; tristate I/O• Refresh Interval: - 1,024...
Symbol |
Parameters |
Rating |
Unit |
VT |
Voltage on Any Pin Relative to GND 5V 3.3V |
1.0 to +7.0 0.5 t0 +4.6 |
V |
VCC |
Supply Voltage 5V 3.3V |
1.0 to +7.0 0.5 t0 +4.6 |
V |
IOUT |
Output Current |
50 |
mA |
PD |
Power Dissipation |
1 |
W |
TA |
Operation Temperature Com. Ind. |
0 to +70 40 to +85 |
|
TSTG |
Storage Temperature |
55 to +125 |
The ISSI IS41C85125 and IS41LV85125 are 512,288 x 8-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1024 random accesses within a single row with access cycle time as short as 12 ns per 8-bit word.
These features make the IS41C85125 and the IS41LV85125 ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IS41C85125 and IS41LV85125 are available in a 28-pin, 400-mil SOJ package