Features: • TTL compatible inputs and outputs• Refresh Interval: 1024 cycles/16 ms• Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden• JEDEC standard pinout• Single power supply 5V ± 10% (IS41C85120) 3.3V ± 10% (IS41LV85120)• Industrail Temperature Range...
IS41LV85120: Features: • TTL compatible inputs and outputs• Refresh Interval: 1024 cycles/16 ms• Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden• JEDEC standard pinout• Si...
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Features: • TTL compatible inputs and outputs; tristate I/O• Refresh Interval: - Auto ...
Features: • Extended Data-Out (EDO) Page Mode access cycle• TTL compatible inputs and ...
Features: • TTL compatible inputs and outputs; tristate I/O• Refresh Interval: - 1,024...
Symbol | Parameters |
Rating |
Unit | |
VT VCC IOUT PD TA TSTG |
Voltage on Any Pin Relative to GND Supply Voltage Output Current Power Dissipation Commercial Operation Temperature Industrail Temperature Storage Temperature |
5V 3.3V 5V 3.3V |
1.0 to +7.0 -0.5 to 4.6 1.0 to +7.0 -0.5 to 4.6 50 1 0 to +70 40 to +85 55 to +125 |
V V V V mA W |
The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 8-bit word. The Byte Write control, of upper and lower byte, makes the IS41C85120 and IS41LV85120 ideal for use in 16 and 32-bit wide data bus systems.
These features make the IS41C85120 and IS41LV85120 ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IS41C85120 and IS41LV85120 are available in a 28-pin, 400-mil SOJ package.