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IS41LV8200

Features: • Extended Data-Out (EDO) Page Mode access cycle• TTL compatible inputs and outputs• Refresh Interval:-- 2,048 cycles/32 ms• Refresh Mode: RAS-Only,CAS-before-RAS (CBR), and Hidden• Single power supply: 5V±10% or 3.3V ± 10%• Byte Write and Byte Read op...

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SeekIC No. : 004379016 Detail

IS41LV8200: Features: • Extended Data-Out (EDO) Page Mode access cycle• TTL compatible inputs and outputs• Refresh Interval:-- 2,048 cycles/32 ms• Refresh Mode: RAS-Only,CAS-before-RAS (...

IS41LV8200 Data Sheet

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Part Number:
IS41LV8200
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs
• Refresh Interval:
-- 2,048 cycles/32 ms
• Refresh Mode: RAS-Only,CAS-before-RAS (CBR), and Hidden
• Single power supply: 5V±10% or 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial temperature range -40 to 85


Pinout

Connection Diagram


Specifications

Symbol
Parameters
Rating
Unit
VT
 Voltage on Any Pin Relative to GND 5V
3.3V
1.0 to +7.0
0.5 to +4.6
V
VCC
 Supply Voltage 5V
3.3V
1.0 to +7.0
0.5 to +4.6
V
IOUT
 Output Current
50
mA
PD
 Power Dissipation
1
W
TA
 Commercial Operation Temperature
Industrial Operation Temperature
0 to +70
-40 to +85
TSTG
 Storage Temperature
55 to +125



Description

The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

These features make the IS41C8200 and IS41LV8200 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.

The IS41C8200 and IS41LV8200 are packaged in 28-pin 300-mil SOJ with JEDEC standard pinouts.




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