Features: • Extended Data-Out (EDO) Page Mode access cycle• TTL compatible inputs and outputs; tristate I/O• Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms• JEDEC standard pinout•...
IS41LV16100S: Features: • Extended Data-Out (EDO) Page Mode access cycle• TTL compatible inputs and outputs; tristate I/O• Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-befor...
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Features: • TTL compatible inputs and outputs; tristate I/O• Refresh Interval: - Auto ...
Features: • Extended Data-Out (EDO) Page Mode access cycle• TTL compatible inputs and ...
Features: • TTL compatible inputs and outputs; tristate I/O• Refresh Interval: - 1,024...
Symbol | Parameters |
Rating |
Unit |
VT | Voltage on Any Pin Relative to GND 5V 3.3V |
1.0 to +7.0 0.5 to +4.6 |
V |
Vcc | Supply Voltage 5V 3.3V |
1.0 to +7.0 0.5 to +4.6 |
V |
IOUT | Output Current |
50 |
mA |
PD | Power Dissipation |
1 |
W |
TA | Commercial Operation Temperature Industrial Operationg Temperature |
0 to +70 40 to +85 |
|
TSTG | Storage Temperature |
55 to +125 |
The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100S ideal for use in 16-, 32-bit wide data bus systems.
These features make the IS41C16100Sand IS41LV16100S ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IS41C16100S and IS41LV16100S are packaged in a 42-pin 400mil SOJ and 400mil 50- (44-) pin TSOP-2.