Features: • TTL compatible inputs and outputs; tristate I/O• Refresh Interval:- Auto refresh Mode: 1,024 cycles /16 ms- RAS-Only, CAS-before-RAS (CBR), and Hidden• JEDEC standard pinout• Single power supply: 3.3V ± 10%• Byte Write and Byte Read operation via two CAS...
IS41LV16100B: Features: • TTL compatible inputs and outputs; tristate I/O• Refresh Interval:- Auto refresh Mode: 1,024 cycles /16 ms- RAS-Only, CAS-before-RAS (CBR), and Hidden• JEDEC standard p...
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Features: • TTL compatible inputs and outputs; tristate I/O• Refresh Interval: - Auto ...
Features: • Extended Data-Out (EDO) Page Mode access cycle• TTL compatible inputs and ...
Features: • TTL compatible inputs and outputs; tristate I/O• Refresh Interval: - 1,024...
Symbol |
Parameters |
Rating |
Unit |
VT |
Voltage on Any Pin Relative to GND 3.3V |
0.5 to +4.6 |
V |
VDD |
Supply Voltage 3.3V |
0.5 to +4.6 |
V |
IOUT |
Output Current |
50 |
mA |
PD |
Power Dissipation |
1 |
W |
TA |
Commercial Operation Temperature Industrial Temperature |
0 to +70 40 to +85 |
|
TSTG |
Storage Temperature |
55 to +125 |
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.
These features make the IS41LV16100B ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications.
The IS41LV16100B is packaged in a 42-pin 400-mil SOJ and 400-mil 50- (44-) pin TSOP (Type II).