Features: • Access time: 70ns• TTL compatible inputs and outputs; tri-state I/O• Wide Power supply voltage: 2.2V to 3.6V• CMOS Standby: 70µA (32-Mbit)• Deep Power Down Standby: 5µA (32-Mbit)• Deep Power-Down Mode: Data Invalid• Page Operation M...
IS32WV204816B: Features: • Access time: 70ns• TTL compatible inputs and outputs; tri-state I/O• Wide Power supply voltage: 2.2V to 3.6V• CMOS Standby: 70µA (32-Mbit)• Deep Power...
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Symbol |
Parameters |
Rating |
Unit |
VT |
Voltage on Any Pin Relative to GND |
0.2 to VDD+3.6 |
V |
VDD |
Supply Voltage |
0.2 to VDD+3.6 |
V |
IOUT |
Output Current |
50 |
mA |
PD |
Power Dissipation |
0.6 |
W |
TSTG |
Storage Temperature |
55 to +150 |
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
The ISSI IS32WV204816B is a high-performance CMOS Pseudo Static RAM, organized as 2Meg x 16 bits.
ISSI CMOS technology provides high density, high speed low power devices that features SRAM-like write timing. Data is written to memory cells on the rising edge of the WE signal. With a page size of 4 words, the device has a page access operation. The device also supports deep powerdown mode providing low-power standby.
The IS32WV204816B is packaged in a 48-pin mini-BGA (6mm x 8mm).