Features: • Standard CMOS process• 1024 x 8 bits EEPROM organization• Byte-wise addressing• Byte-wise erase/write• Irreversible byte-wise write protection• Single 5V power supply for read and write/erase• Low power operation: 3 mA typical active current...
IS23SC4418: Features: • Standard CMOS process• 1024 x 8 bits EEPROM organization• Byte-wise addressing• Byte-wise erase/write• Irreversible byte-wise write protection• Single...
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Features: • 16K serial EEPROM with security features• Comply with ISO/IEC Standard 781...
Features: ·8051 based MCU manufactured with CMOS technology·Enhanced 16-bit arithmetic and 3 times...
Features: ·8051 based MCU manufactured with CMOS technology·Enhanced 16-bit arithmetic and 3 times...
Symbol | Parameter | Min. | Max. | Unit |
Vcc | Supply Voltage | 0.3 | 6 | V |
VI | Input Voltage | 0.3 | 6 | V |
TSTG | Storage Temperature | 40 | 125 | |
PMAX | Power Dissipation | 0.3 | 60 | mV |
IS23SC4418 contains 1024 x 8 bits of EEPROM with programmable write protection for each byte. Random read access to any byte in the memory is always possible.
The memory IS24C08A can also be erased and written byte by byte.
Erasing old data in the byte location must be performed before new data can be written to the location. Each byte in the memory has a corresponding protect bit. The protect bits are only one-time programmable and cannot be erased. After the protect bits are enabled (logic 0), the corresponding bytes can never be changed again. A write-protect bit with data-compare function is available for user to verify the data in the memory before enabling the protect bit.