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IRS2308S

Features: • Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from 10 V to 20 V• Undervoltage lockout for both channels• 3.3 V, 5 V, and 15 V input logic ...

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SeekIC No. : 004378767 Detail

IRS2308S: Features: • Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from...

IRS2308S Data Sheet

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Part Number:
IRS2308S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• 3.3 V, 5 V, and 15 V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• Outputs in phase with inputs
• Logic and power ground +/- 5 V offset.
• Internal 540 ns deadtime
• Lower di/dt gate driver for better noise immunity
• RoHS compliant


Specifications

Symbol Definition Min Max Units
VB High side floating supply voltage -0.3 625 V
VS High side floating supply voltage (Note2) VB -20 VB +0.3
VHO High side floating output voltage VS -0.3 VB +0.3
VCC Low side fixed supply voltage (Note2) -0.3 25
VLO Low side output voltage -0.3 Vcc+0.3
VIN Logic input voltage (HIN & LIN ) VSS -0.3 Vcc+0.3
dVS/dt Allowable Vs voltage slew rate --- 50 V/ms
Pd Maximum power dissipation @ TA +25°C (8 lead PDIP) --- 1.0 W
(8 lead SOIC) --- 1.6
RthJA Thermal resistance, junction to ambient (8 lead PDIP) --- 115 /W
(8 lead SOIC) --- 75
TJ Junction Temperature --- 150
TS Storage Temperature -55 150
TL Lead temperature (soldering, 10 seconds) --- 300



Description

The IRS2308/IRS23084 are high voltage, high speed power MOSFET and IGBT drivers with dependent high-side and low-side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.




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