IRS21851SPbF

Power Driver ICs

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SeekIC No. : 00536173 Detail

IRS21851SPbF: Power Driver ICs

floor Price/Ceiling Price

US $ .55~1.25 / Piece | Get Latest Price
Part Number:
IRS21851SPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.25
  • $.74
  • $.59
  • $.55
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Product : MOSFET Gate Drivers Type : High Side
Rise Time : 40 ns Fall Time : 40 ns
Supply Voltage - Max : 20 V Supply Voltage - Min : 10 V
Supply Current : 0.24 mA Maximum Power Dissipation : 1250 mW
Maximum Operating Temperature : + 125 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    

Description

Mounting Style : SMD/SMT
Maximum Operating Temperature : + 125 C
Product : MOSFET Gate Drivers
Package / Case : SOIC-8
Packaging : Tube
Supply Voltage - Max : 20 V
Supply Voltage - Min : 10 V
Fall Time : 40 ns
Type : High Side
Rise Time : 40 ns
Supply Current : 0.24 mA
Maximum Power Dissipation : 1250 mW


Features:

· Gate drive supply range from 10 V to 20 V
· Undervoltage lockout for V BS and V CC
· 3.3 V and 5 V input logic compatible
· Tolerant to negative transient voltage
· Matched propagation delays for all channels
• RoHS compliant



Specifications

Symbol Definition Min. Max. Units
VCC Low-side supply voltage -0.3 20 (Note 1) V
VIN Logic input voltage (HIN) COM -0.3 VCC + 0.3
VB High-side floating well supply voltage -0.3 620 (Note 1)
VS High-side floating well supply return voltage VB - 20 VB + 0.3
VHO Floating gate drive output voltage VS - 0.3 VB + 0.3
dVs/dt Allowable VS offset supply transient relative to COM - 50 V/ns
PD Package power dissipation @ TA +25 °C - 1.25 W
RthJA Thermal resistance, junction to ambient - 100 /W
TJ Junction temperature -55 150
TS Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300
Note 1: All supplies are fully tested at 25 V. An internal 20 V clamp exists for each supply.


Description

The IRS21851 is a high voltage, high speed power OSFET and IGBT single high-side driver with propagation elay matched output channels. Proprietary VIC and latch immune CMOS technologies enable uggedized monolithic construction. The floating logic nput is compatible with standard CMOS or LSTTL utput, down to 3.3 V logic and can be operated up to 00 V above the ground. The output driver features a igh pulse current buffer stage designed for minimum river cross-conduction. The floating channel an be used to drive an N-channel power MOSFET r IGBT in the high- side configuration, which operates p to 600 V.




Parameters:

Technical/Catalog InformationIRS21851SPBF
VendorInternational Rectifier
CategoryIntegrated Circuits (ICs)
ConfigurationHigh-Side
Voltage - Supply10 V ~ 20 V
Current - Peak4A
Delay Time160ns
Package / Case8-SOIC (3.9mm Width)
PackagingTube
Number of Outputs1
Input TypeNon-Inverting
Number of Configurations1
Operating Temperature-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)600V
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRS21851SPBF
IRS21851SPBF



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