Features: · Floating channel designed for bootstrap operation· Fully operational to +600 V· Tolerant to negative transient voltage, dV/dt immune· Gate drive supply range from 10 V to 20V · Undervoltage lockout· CMOS Schmitt-triggered inputs with pull-down· Output in phase with input (IRS2117) or o...
IRS2118S: Features: · Floating channel designed for bootstrap operation· Fully operational to +600 V· Tolerant to negative transient voltage, dV/dt immune· Gate drive supply range from 10 V to 20V · Undervolt...
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Features: • Floating channel designed for bootstrap operation• Fully operational to +2...
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figs. 5 through 8.
Symbol |
Definition |
Min. |
Max. |
Units | |
VB |
High-side floating supply voltage |
-0.3 |
625 |
V | |
VS |
High-side floating supply offset voltage |
VB - 25 |
VB + 0.3 | ||
VHO |
High-side floating output voltage |
VS - 0.3 |
VB + 0.3 | ||
VCC |
Logic supply voltage |
-0.3 |
25 | ||
VIN |
Logic input voltage |
-0.3 |
VCC + 0.3 | ||
dVs/dt |
Allowable offset supply voltage transient(Fig. 2) |
- |
50 |
V/ns | |
PD |
Package power dissipation @ TA +25 | (8 lead PDIP) |
- |
1.0 |
W |
(8 lead SOIC) |
- |
0.625 | |||
RthJA |
Thermal resistance, junction to ambient | (8 lead PDIP) |
- |
125 |
/W |
(8 lead SOIC) |
- |
200 | |||
TJ |
Junction temperature |
- |
150 |
||
TS |
Storage temperature |
-55 |
150 | ||
TL |
Lead temperature (soldering, 10 seconds) |
- |
300 |
The IRS2117/IRS2118 are a high voltage, high speed powerMOSFET and IGBT driver. ProprietaryHVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input of IRS21834S is compatible with standard CMOS outputs. The output driver of IRS21834S features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel powerMOSFET or IGBT in the high-side or low-side configuration which operates up to 600 V.