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IRS2112

Features: · Floating channel designed for bootstrap operation· Fully operational to +600 V· Tolerant to negative transient voltage, dV/dt immune· Gate drive supply range from 10 V to 20 V· Undervoltage lockout for both channels· 3.3 V logic compatible· Separate logic supply range from 3.3 V to 20 ...

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SeekIC No. : 004378745 Detail

IRS2112: Features: · Floating channel designed for bootstrap operation· Fully operational to +600 V· Tolerant to negative transient voltage, dV/dt immune· Gate drive supply range from 10 V to 20 V· Undervolt...

IRS2112 Data Sheet

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Part Number:
IRS2112
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Floating channel designed for bootstrap operation
· Fully operational to +600 V
· Tolerant to negative transient voltage, dV/dt immune
· Gate drive supply range from 10 V to 20 V
· Undervoltage lockout for both channels
· 3.3 V logic compatible
· Separate logic supply range from 3.3 V to 20 V
· Logic and power ground +/- 5 V offset
· CMOS Schmitt-triggered inputs with pull-down
· Cycle by cycle edge-triggered shutdown logic
· Matched propagation delay for both channels
· Outputs in phase with inputs
•  RoHS compliant


Specifications

Symbol Definition Min. Max. Units
VB High-side floating supply voltage -0.3 625 V
VS High-side floating supply offset voltage VB - 25 VB + 0.3
VHO High-side floating output voltage VS - 0.3 VB + 0.3
VCC Low-side fixed supply voltage -0.3 25
VLO Low-side output voltage -0.3 VCC + 0.3
VDD Logic supply voltage -0.3 VSS + 25
VSS Logic supply offset voltage VCC - 25 VCC + 0.3
VIN Logic input voltage (HIN, LIN & SD) VSS - 0.3 VDD + 0.3
dVs/dt Allowable offset supply voltage transient (Fig. 2) - 50 V/ns
PD Package power dissipation @ TA +25 (14 Lead DIP) - 1.6 W
(16 Lead SOIC) - 1.25
RTHJA Thermal resistance, junction to ambient (14 Lead DIP) - 75 /W
(16 Lead SOIC) - 100
TJ Junction temperature - 150
TS Storage temperature -55 150
TL Storage temperature - 300



Description

The IRS2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.




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