Features: • Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from 10 V to 20 V• Undervoltage lockout for both channels• 3.3 V, 5 V, and 15 V input logic ...
IRS2109: Features: • Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from...
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Features: • Floating channel designed for bootstrap operation• Fully operational to +2...
Symbol | Definition | Min. | Max. | Units | |
VB | High-side floating absolute voltage | -0.3 | 625 | V | |
VS | High side floating supply voltage | VB - 25 | VB + 0.3 | ||
VHO | High-side floating output voltage | VS - 0.3 | VB + 0.3 | ||
VCC | Low-side and logic fixed supply voltage | -0.3 | 25 | ||
VLO | Low-side output voltage | -0.3 | VCC + 0.3 | ||
DT | Programmable deadtime pin voltage (IRS21094 only) | VSS - 0.3 | VCC + 0.3 | ||
VIN | Logic input voltage | VSS - 0.3 | VCC + 0.3 | ||
VSS | Logic ground (IRS21094/IRS21894 only) | VCC - 25 | VCC + 0.3 | ||
dVS/dt | Allowable offset supply voltage transient | - | 50 | V/ns | |
Pd | Maximum power dissipation @ TA +25°C | (8 Lead PDIP) | - | 1.0 | W |
(8 Lead SOIC) | - | 0.625 | |||
(14 lead PDIP) | - | 1.6 | |||
(14 lead SOIC) | - | 1.0 | |||
RthJA | Thermal resistance, Junction to ambient | (8 Lead PDIP) | - | 125 | /W |
(8 Lead SOIC) | - | 200 | |||
(14 lead PDIP) | - | 75 | |||
(14 lead SOIC) | - | 120 | |||
TJ | Junction Temperature | - | 150 | ||
TS | Storage Temperature | -55 | 150 | ||
TL | Lead temperature (soldering, 10 seconds) | - | 300 |
The IRS2109/IRS21094 are high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highside configuration which operates up to 600 V.