IRS21064PBF

Maximum Operating Temperature : + 125 C
Packaging : Tube
Product : H-Bridge Drivers
Mounting Style : Through Hole
Supply Voltage - Max : 20 V
Supply Voltage - Min : 10 V
Fall Time : 80 ns
Type : High and Low Side
Maximum Power Dissipation : 1.6 W
Package / Case : PDIP-14
Supply Current : 0.18 mA
Rise Time : 220 ns


Features:

• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• 3.3 V, 5 V, and 15 V input logic compatible
• Matched propagation delay for both channels
• Logic and power ground +/- 5 V offset.
• Lower di/dt gate driver for better noise immunity
• Outputs in phase with inputs (IRS2106)


Specifications

Symbol	Definition		Min.	Max.	Units
VB VS VHO	High side floating absolute voltage High side floating supply offset voltage High side floating output voltage		-0.3 VB - 25 VS - 0.3	625 VB + 0.3 VB + 0.3	V
VCC VLO VIN VSS	Low side and logic fixed supply voltage Low side output voltage Logic input voltage Logic ground (IRS21064 only)		-0.3 -0.3 VSS - 0.3 VCC - 25	25 VCC + 0.3 VCC + 0.3 VCC + 0.3
dVS/d	Allowable offset supply voltage transient		-	50	V/ns
PD	Package power dissipation @ TA +25	8 lead PDIP) 8 lead SOIC) 14 lead PDIP) 14 lead SOIC)	- - - -	1.0 0.625 1.6 1.0	W
RthJA	Thermal resistance, junction to ambient	8 lead PDIP) 8 lead SOIC) 14 lead PDIP) 14 lead SOIC)	- - - -	125 200 75 120	/W
TJ TS TL	Junction temperature Storage temperature Lead temperature (soldering, 10 seconds)		- -50 -	150 150 300

Description

The IRS2106/IRS21064 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.

Parameters:

Technical/Catalog Information	IRS21064PBF
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Independent
Voltage - Supply	10 V ~ 20 V
Current - Peak	290mA
Delay Time	220ns
Package / Case	14-DIP (300 mil)
Packaging	Tube
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	600V
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRS21064PBF IRS21064PBF