Features: • Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from 10 V to 20 V• Undervoltage lockout• 3.3 V, 5 V, and 15 V logic input compatible• ...
IRS2101: Features: • Floating channel designed for bootstrap operation• Fully operational to +600 V• Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from...
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Features: • Floating channel designed for bootstrap operation• Fully operational to +2...
Symbol |
Definition |
Min. |
Max. |
Units | |
VB |
High-side floating supply voltage |
-0.3 |
625 |
V | |
VS |
High-side floating supply offset voltage |
VB - 25 |
VB + 0.3 | ||
VHO |
High-side floating output voltage |
VS - 0.3 |
VB + 0.3 | ||
VCC |
Low-side and logic fixed supply voltage |
-0.3 |
25 | ||
VLO |
Low-side output voltage |
-0.3 |
VCC + 0.3 | ||
VIN |
Logic input voltage (HIN & LIN) |
-0.3 |
VCC + 0.3 | ||
dVS/dt |
Allowable offset supply voltage transient |
- |
50 |
V/ns | |
PD |
Package power dissipation @ TA +25 | (8 lead PDIP) |
- |
1.0 |
W |
(8 lead SOIC) |
- |
0.625 | |||
RthJA |
Thermal resistance, junction to ambient | (8 lead PDIP) |
- |
125 |
/W |
(8 lead SOIC) |
- |
200 | |||
TJ |
Junction temperature |
- |
150 |
||
TS |
Storage temperature |
-55 |
150 | ||
TL |
Lead temperature (soldering, 10 seconds) |
- |
300 |
The IRS2101 is a high voltage, high speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highside configuration which operates up to 600 V.