Power Driver ICs Dig Aud Drvr w/Deadtime & Prot
IRS20124STRPBF: Power Driver ICs Dig Aud Drvr w/Deadtime & Prot
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Features: • Floating channel designed for bootstrap operation• Fully operational to +2...
Product : | Driver ICs - Various | Type : | High and Low Side | ||
Rise Time : | 40 ns | Fall Time : | 35 ns | ||
Supply Voltage - Max : | 18 V | Supply Voltage - Min : | 10 V | ||
Supply Current : | 4 mA | Maximum Power Dissipation : | 1.25 W | ||
Maximum Operating Temperature : | + 125 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-14 | Packaging : | Reel |
The IRS20124STRPBF is designed as one kind of high voltage, high speed power MOSFET driver with internal deadtime and shutdown functions specially designed for Class D audio amplifier applications.Also it is designed for immunity from external disturbances such as VCC perturbation and incoming switching noise on the DT pin.Internal delays are optimized to achieve minimal deadtime variations. Proprietary HVIC and latch immune CMOS technologies guarantee operation down to Vs=-4 V, providing outstanding capabilities of latch and surge immunities with rugged monolithic construction.
Features of the IRS20124STRPBF are:(1)integrated deadtime generation and bi-directional over-current sensing simplify design;(2)programmable compen-sated preset deadtime for improved THD performances over temperature;(3)high noise immunity;(4)shutdown function protects devices from overload conditions;(5)operates up to 1 MHz;(6)3.3 V/5 V logic compatible input;(7)200 V high voltage ratings deliver up to 1000 W output power in Class D audio amplifier applications.
The absolute maximum ratings of the IRS20124STRPBF can be summarized as:(1)high side floating supply voltage:-0.3 to 220 V;(2)high side floating supply voltage:VB-20 to VB+0.3 V;(3)high side floating output voltage:Vs-0.3 to VB+0.3 V;(4)low side fixed supply voltage:-0.3 to 20 V;(5)low side output voltage:-0.3 to Vcc+0.3 V;(6)input voltage:-0.3 to Vcc+0.3 V;(7)lead temperature (soldering, 10 seconds):300°C;(8)storage temperature:-55 to 150°C;(9)junction temperature:150°C;(10)thermal resistance, junction to ambient:100 °C/W;(11)maximum power dissipation:1.25 W.If you want to know more information such as the electrical characteristics about the IRS20124STRPBF,please download the datasheet in www.seekic.com or www.chinaicmart.com .
Technical/Catalog Information | IRS20124STRPBF |
Vendor | International Rectifier |
Category | Integrated Circuits (ICs) |
Mounting Type | Surface Mount |
Package / Case | 14-SOIC (3.9mm Width), 14-SOL |
Type | MOSFET Driver |
Packaging | Tape & Reel (TR) |
Applications | Amplifiers, Receivers |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRS20124STRPBF IRS20124STRPBF |