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IRLS610A

MOSFET

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SeekIC No. : 00166034 Detail

IRLS610A: MOSFET

IRLS610A Data Sheet

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Part Number:
IRLS610A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 0.046 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220F
Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 0.046 Ohms


Features:

`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 10 A (Max.) @ VDS = 200V
`Lower RDS(ON) : 1.185 (Typ.)


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain-to-Source Voltage
200
V
ID
 Continuous Drain Current (TC=25 )
Continuous Drain Current (TC=100 )
2.5
1.6
A
IDM
Drain Current-Pulsed
Gate-to-Source Voltage
12
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
20
mJ
IAR
Avalanche Current
2.9
A
EAR
Repetitive Avalanche Energy
1.9
mJ
dV/dt
Peak Diode Recovery dv/dt
5.0
V/ns
PD
 Total Power Dissipation (TC=25 )
Linear Derating Factor
19
0.15
W
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds
300



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