IRLR3110ZPBF

MOSFET

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SeekIC No. : 00146165 Detail

IRLR3110ZPBF: MOSFET

floor Price/Ceiling Price

US $ .49~1.24 / Piece | Get Latest Price
Part Number:
IRLR3110ZPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.24
  • $.8
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  • $.49
  • Processing time
  • 15 Days
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Upload time: 2024/5/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : 16 V Continuous Drain Current : 63 A
Resistance Drain-Source RDS (on) : 16 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Packaging : Tube
Continuous Drain Current : 63 A
Resistance Drain-Source RDS (on) : 16 mOhms
Gate-Source Breakdown Voltage : 16 V


Features:

Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
 Repetitive Avalanche Allowed up to Tjmax



Specifications

  Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited)
63
A
ID @ TC =100 Continuous Drain Current, VGS @ 10V (Package Limited)
45
ID @ TC = 25 Continuous Drain Current,VGS @ 10V (Package Limited)
42
IDM Pulsed Drain Current
250
PD @TC= 25 Power Dissipation
140
W
  Linear Derating Factor
0.95
W/
VGS Gate-to-Source Voltage
±16
V
EAS (Thermally limited) Single Pulse Avalanche Energy
110
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
140
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Reflow Soldering Temperature, for 10 seconds
300
  Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLR3110ZPbFutilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRLR3110ZPbF are a 175 junction operating  temperature, fast switching speed and improved  repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRLR3110ZPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C63A
Rds On (Max) @ Id, Vgs14 mOhm @ 38A, 10V
Input Capacitance (Ciss) @ Vds 3980pF @ 25V
Power - Max140W
PackagingTube
Gate Charge (Qg) @ Vgs48nC @ 4.5V
Package / CaseDPak,SC-63,TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLR3110ZPBF
IRLR3110ZPBF



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