MOSFET N-CH 30V 179A SUPER-220
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 30V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 179A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 71A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 1V @ 250µA | Gate Charge (Qg) @ Vgs: | 140nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 5000pF @ 25V | ||
Power - Max: | 270W | Mounting Type: | Through Hole | ||
Package / Case: | Super-220?-3 (Straight Leads) | Supplier Device Package: | SUPER-220? (TO-273AA) |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 179 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 126 | A |
IDM | Pulsed Drain Current | 720 | A |
PD @TC = 25°C | Power Dissipation | 270 | W |
Linear Derating Factor | 1.8 | W/°C | |
VGS | Gate-to-Source Voltage | ±16 | V |
EAS | Single Pulse Avalanche Energy | 610 | mJ |
IAR | Avalanche Current | 71 | A |
EAR | Repetitive Avalanche Energy | 27 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
Recommended clip force | 20 | N |
Fifth Generation HEXFETs from International Rectifier IRLBA3803P utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLBA3803Pdesign that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The Super-220 IRLBA3803P is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. It has increased current handling capability over both the TO-220 and the much larger TO-247 package.
This makes IRLBA3803P ideal to reduce component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline.
This package has also been designed to meet automotive qualification standard Q101.