IRLBA1304P

MOSFET N-CH 40V 185A SUPER-220

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IRLBA1304P Picture
SeekIC No. : 003434161 Detail

IRLBA1304P: MOSFET N-CH 40V 185A SUPER-220

floor Price/Ceiling Price

Part Number:
IRLBA1304P
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 185A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 140nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 7660pF @ 25V
Power - Max: 300W Mounting Type: Through Hole
Package / Case: Super-220?-3 (Straight Leads) Supplier Device Package: SUPER-220? (TO-273AA)    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Drain to Source Voltage (Vdss): 40V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 300W
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 140nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V
Package / Case: Super-220?-3 (Straight Leads)
Supplier Device Package: SUPER-220? (TO-273AA)
Current - Continuous Drain (Id) @ 25° C: 185A
Input Capacitance (Ciss) @ Vds: 7660pF @ 25V


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 185, pkg limited to 95A* A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 130, pkg limited to 95A* A
IDM Pulsed Drain Current 740 A
PD @TC = 25°C Power Dissipation 300 W
  Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 1160 mJ
IAR Avalanche Current 100 A
EAR Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Recommended clip force 20 N



Description

The IRLBA1304P HEXFET® is the most popular power MOSFET in the world.
This particular HEXFET® IRLBA1304P is in the Super220TM and has the same outline and pinout as the industry standard TO-220. It has increased current handling capability over both the TO-220 and the much larger TO-247 package. This makes IRLBA1304P ideal to reduce component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. This package has also been designed to meet automotive qualification standard Q101.




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