MOSFET MOSFT 30V 105A 6mOhm 23nC Qg log lvl
IRL8113SPBF: MOSFET MOSFT 30V 105A 6mOhm 23nC Qg log lvl
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 105 A | ||
Resistance Drain-Source RDS (on) : | 7.1 mOhms | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Symbol | Parameter | Max. | Units |
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 105 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 74 | |
IDM | Pulsed Drain Current | 420 | |
PD @TC = 25 | Maximum Power Dissipation | 110 | W |
PD @TC = 100 | Maximum Power Dissipation | 57 | |
Linear Derating Factor | 0.76 | W/ | |
TJ , TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | |
Soldering Temperature for 10 seconds | 300 (1.6mm from case) | ||
Mounting Torque, 6-32 or M3 screw | 10 lbf`in (1.1N`m) |
Technical/Catalog Information | IRL8113SPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 105A |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 21A, 10V |
Input Capacitance (Ciss) @ Vds | 2840pF @ 15V |
Power - Max | 110W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 35nC @ 4.5V |
Package / Case | D²Pak, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRL8113SPBF IRL8113SPBF |