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IRL8113PBF

MOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl

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IRL8113PBF: MOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl

IRL8113PBF Data Sheet

floor Price/Ceiling Price

US $ .63~1.44 / Piece | Get Latest Price
Part Number:
IRL8113PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.44
  • $.93
  • $.67
  • $.63
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 105 A
Resistance Drain-Source RDS (on) : 7.1 mOhms Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 105 A
Resistance Drain-Source RDS (on) : 7.1 mOhms


Features:

· Low RDS(on) at 4.5V VGS
· Low Gate Charge
· Fully Characterized Avalanche Voltage and Current


Application

· High Frequency Synchronous Buck Converters for Computer Processor Power
· Lead-Free


Specifications

Symbol Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 105 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 74
IDM Pulsed Drain Current 420
PD @TC = 25 Maximum Power Dissipation 110 W
PD @TC = 100 Maximum Power Dissipation 57
  Linear Derating Factor 0.76 W/
TJ , TSTG Operating Junction and Storage Temperature Range -55 to + 175  
  Soldering Temperature for 10 seconds 300 (1.6mm from case)
  Mounting Torque, 6-32 or M3 screw 10 lbf`in (1.1N`m)



Parameters:

Technical/Catalog InformationIRL8113PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C105A
Rds On (Max) @ Id, Vgs6 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds 2840pF @ 15V
Power - Max110W
PackagingTube
Gate Charge (Qg) @ Vgs35nC @ 4.5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRL8113PBF
IRL8113PBF



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