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IRL7NJ3802

Features: ·Low RDS(on) ·Avalanche Energy Ratings ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Light WeightSpecifications Parameter Units ID @ VGS=-12V,TC=25 CContinuous Drain Curren 22* A ID @ VGS=-12V,TC=100 CContinuous D...

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IRL7NJ3802: Features: ·Low RDS(on) ·Avalanche Energy Ratings ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Light WeightSpecifications Parameter Units ...

IRL7NJ3802 Data Sheet

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Part Number:
IRL7NJ3802
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Low RDS(on)
·Avalanche Energy Ratings
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Light Weight


Specifications
Parameter
Units
ID @ VGS=-12V,TC=25
 CContinuous Drain Curren
22*
A
ID @ VGS=-12V,TC=100
 CContinuous Drain Curren
22*
IDM
 Pulsed Drain Current
88
PD@ TC= 25
 CMax. Power Dissipatio
50
W
 Linear Derating Factor
0.4
W/
VGS
 Gate-to-Source Voltage
±12
V
EAS
 Single Pulse Avalanche Energy
130
mJ
IAR
 Avalanche Current
22
A
EAR
 Repetitive Avalanche Energy
5.0
mJ
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300( for 5s)
 Weight
1.0
g



Description

Seventh Generation HEXFET®  power MOSFETs from International Rectifier IRL7NJ3802 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.  This benefit, combined with the fast switching speed and ruggedized device IRL7NJ3802 design that HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a wide variety of applications.

These devices IRL7NJ3802 are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.




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