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IRL6903

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -105 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V -74 A IDM Pulsed Drain Current -360 A PD @TC = 25°C Power Dissipation 200 W ...

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IRL6903: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -105 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V -74 A IDM ...

IRL6903 Data Sheet

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Part Number:
IRL6903
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Description



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -105 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V -74 A
IDM Pulsed Drain Current -360 A
PD @TC = 25°C Power Dissipation 200 W
  Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 1000 mJ
IAR Avalanche Current -55 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)
  Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)  



Description

Fifth Generation HEXFETs from International Rectifier IRL6903 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of IRL6903 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




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